Now showing items 1-7 of 7
Stochastic approach to the smart quantum confinement model in porous silicon
(Surface Science 515 (2002) L509-L513, 2002)
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...
Design and Characterization of a High Vacuum Metals Deposition System based on Electron Beam Evaporation
We describe a high vacuum metals deposition system based ona variation of a pendant-drop type electron beam evaporator.This system uses a Molybdenum crucible as an evaporantinstead of a rod or wire usually used in ultrathin ...
Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films
(Materials Research Society Symposium Proceedings 737 (2003), 2003)
A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. ...
Vacuum treatment to stabilize oxidation at low temperature region in porous silicon
Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...
Phototransport Properties of a-SiC:H Alloys
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...
Study of oxide bands in p-type porous silicon layers
The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...
Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.