Phototransport Properties of a-SiC:H Alloys
Ramírez Porras, Arturo
Weisz, S. Z.
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We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
External link to the item10.1557/PROC-377-583
- Física