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dc.creatorWeisz, S. Z.
dc.creatorRamírez Porras, Arturo
dc.creatorGómez, Manuel
dc.creatorMany, A.
dc.creatorGoldstein, Yehuda
dc.creatorSavir, Esther
dc.date.accessioned2020-01-31T21:49:05Z
dc.date.available2020-01-31T21:49:05Z
dc.date.issued1997
dc.identifier.citationhttps://www.sciencedirect.com/science/article/pii/S0022231396004383es_ES
dc.identifier.issn0022-2313
dc.identifier.urihttps://hdl.handle.net/10669/80437
dc.description.abstractMeasurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.es_ES
dc.language.isoen_USes_ES
dc.sourceJournal of Luminescence 72-74, pp.729-730es_ES
dc.subjectPhotoluminescencees_ES
dc.subjectSurface Stateses_ES
dc.subjectPorous silicones_ES
dc.titleRelation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicones_ES
dc.typeartículo científicoes_ES
dc.identifier.doi10.1016/S0022-2313(96)00438-3
dc.description.procedenceUCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Físicaes_ES


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