Show simple item record

dc.creatorRamírez Porras, Arturo
dc.creatorWeisz, S. Z.
dc.date.accessioned2010-07-23T22:18:27Zes_ES
dc.date.available2010-07-23T22:18:27Zes_ES
dc.date.issued2002es_ES
dc.identifier.citationhttp://dx.doi.org/10.1016/S0039-6028(02)01963-5es_ES
dc.identifier.urihttps://hdl.handle.net/10669/322es_ES
dc.description.abstractA model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework.en
dc.description.sponsorshipVicerrectoría de Investigación, UCR.es_ES
dc.language.isoen_USes_ES
dc.publisherSurface Science 515 (2002) L509-L513en
dc.subjectModelo semiempíricoes_ES
dc.subjectMétodos electroquímicoses_ES
dc.subjectFotoluminiscenciaes_ES
dc.subjectSilicioes_ES
dc.subjectÓxido de Silicioes_ES
dc.subjectPotencial de pozoes_ES
dc.subjectSuperficies semiconductorases_ES
dc.titleStochastic approach to the smart quantum confinement model in porous siliconen
dc.typeartículo científicoes_ES
dc.identifier.doi10.1016/S0039-6028(02)01963-5es_ES
dc.description.procedenceUCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA)es_ES


Files in this item

Thumbnail
Thumbnail
Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record