Phototransport Properties of a-SiC:H Alloys

Balberg, I.; Nery, Guillermo; Ramírez Porras, Arturo; Resto, O.; Weisz, S. Z.; Lubianiker, Y.

doi:https://doi.org/10.1557/PROC-377-583

Phototransport Properties of a-SiC:H Alloys

Archivos

Ramirez1995_Phototransport a-SiC-H.pdf (647,98 KB)

Fecha

1995

Authors

Balberg, I.

Nery, Guillermo

Ramírez Porras, Arturo

Resto, O.

Weisz, S. Z.

Lubianiker, Y.

DOI

https://doi.org/10.1557/PROC-377-583

Resumen

We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.